(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline (\mathbf{X}\equivGe, GaSb, CdTe, or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion

Volume 8, Issue 6, December 2023     |     PP. 575-595      |     PDF (1349 K)    |     Pub. Date: November 21, 2023
DOI: 10.54647/physics140591    46 Downloads     206706 Views  

Author(s)

H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
In the n^+(p^+)-p(n) crystalline (X\equivGe, GaSb, CdTe or CdSe)-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius r_{d\left(a\right)}, both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap (IBG) increases, according to the increase in photovoltaic efficiency, as observed in Tables 1-5, being in good accordance with an important result obtained by Shockley and Queisser [10], stating that for an increasing IBG the photovoltaic efficiency increases. Further, for highest values of r_{d\left(a\right)}, the limiting highest efficiencies are found to be given in Tables 2.2, 3.2, 4.2, and 5.2, as: 14.82 %, 12.16 %, 26.55 %, and 23.69 %,), obtained in such n^+(p^+)-p(n) crystalline (Ge, GaSb, CdTe, or CdSe)-junction solar cells at the open circuit voltage {\ V}_{oc}=0.33 V, 0.355 V, 0.82 V, and 0.89 V, respectively, and at T=300 K. Furthermore, from the well-known Carnot-efficiency theorem, as given in Eq. (46), being obtained from the second principle of the thermodynamics, and from the above results of limiting highest efficiencies, the corresponding highest hot reservoir temperatures, T_H=352.2 K, 341.5 K, 408.4 K, and 393.1 K, respectively. Thus, as noted above, \eta_{max.} and T_H both increase with an increasing IBG, for each (X\equivGe, GaSb, CdTe, or CdSe)- crystal at T=300 K\equivT_C.

Keywords
donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; efficiency

Cite this paper
H. Van Cong, (14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline (\mathbf{X}\equivGe, GaSb, CdTe, or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion , SCIREA Journal of Physics. Volume 8, Issue 6, December 2023 | PP. 575-595. 10.54647/physics140591

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